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Structure field maps for sulfides of composition AB₂X₄HAEUSELER, H.Journal of solid state chemistry (Print). 1990, Vol 86, Num 2, pp 275-278, issn 0022-4596Article

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ZnIn₂S₄ as a window in heterojunction solar cellsVIGIL, O; CALZADILLA, O; SEURET, D et al.Solar energy materials. 1984, Vol 10, Num 2, pp 139-143, issn 0165-1633Article

Optical measurements and temperature dependence of the energy gap in ZnIn₂S₄ layered compoundANAGNOSTOPOULOS, A; KAMBAS, K; PLOSS, B et al.Physica status solidi. B. Basic research. 1984, Vol 123, Num 2, pp K155-K159, issn 0370-1972Article

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Trap saturation in ZnIn₂S₄CRANDLES, D; CHARBONNEAU, S; FORTIN, E et al.Solid state communications. 1985, Vol 56, Num 4, pp 367-370, issn 0038-1098Article

X-ray and spectroscopic investigations on polycrystalline Co_xZn_1-xIn₂S₄ solid solutionFIORANI, D; GASTALDI, L; VITICOLI, S et al.Solid state communications. 1983, Vol 48, Num 10, pp 865-867, issn 0038-1098Article

The trap distribution and the luminescence band in ZnIn₂S₄CRANDLES, D; FORTIN, E.Physica status solidi. A. Applied research. 1986, Vol 95, Num 1, pp K47-K51, issn 0031-8965Article

Voltage-dependent conductivity along the c-axis of ZnIn₂S₄ (III)ANAGNOSTOPOULOS, A. N; LIOUTAS, C.Physica status solidi. A. Applied research. 1983, Vol 79, Num 2, pp 513-516, issn 0031-8965Article

Optical properties of some AB₂X₄ layered compoundsBORGHESI, A; GUIZZETTI, G; NOSENZO, L et al.Progress in crystal growth and characterization. 1986, Vol 13, Num 2, pp 97-103, issn 0146-3535Article

Temperature dependence of the energy gap and some electrical properties of Zn₂In₂S₅(II) single crystalsKALOMIROS, J. A; ANAGNOSTOPOULOS, A. N; SPYRIDELIS, J et al.Semiconductor science and technology. 1989, Vol 4, Num 7, pp 536-542, issn 0268-1242, 7 p.Article

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Hydrostatic pressure dependence of the fundamental absorption edges of CdInGaS₄ and ZnIn₂S₄TOYODA, T; SORAZAWA, M; NAKANISHI, H et al.Japanese journal of applied physics. 1992, Vol 32, pp 291-293, issn 0021-4922, SUP1Conference Paper

Comparison of the structure and the electric properties of ZnIn₂S₄(III)- and CdInGaS₄-layered crystalsANAGNOSTOPOULOS, A. N; MANOLIKAS, C; PAPADOPOULOS, D et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 595-601, issn 0031-8965Article

A Raman study of compositional disorder in defect chalcopyritesRAZZETTI, C; LOTTICI, P. P; ZANOTTI, L et al.Physica status solidi. B. Basic research. 1983, Vol 118, Num 2, pp 743-749, issn 0370-1972Article

Investigating recombination kinetics in ZnIn₂S₄: extrinsically excited photoconductivity and photoluminescenceCRANDLES, D; FORTIN, E.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 9, pp 1751-1758, issn 0022-3727Article

Raman scattering in nZnS-In₂S₃ layered compoundsRAZZETTI, C; LOTTICI, P. P; BINI, S et al.Physica status solidi. B. Basic research. 1993, Vol 177, Num 2, pp 525-532, issn 0370-1972Article

Octahedral vs tetrahedral coordination of the Co (II) ion in layer compounds: CoxZn_1-xIn₂S₄ (0≤x≤0.46)BATTISTONI, C; GASTALDI, L; LAPICCIRELLA, A et al.The Journal of physics and chemistry of solids. 1986, Vol 47, Num 9, pp 899-903, issn 0022-3697Article

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Caractérisation de matériaux semi-conducteurs par des méthodes photoélectrochimiques : cvas de composés ternaires II-III₂-VI₄ et du silicium multicristallin pour cellules solaires photovoltaïques = Characterization of semiconductor materials using photoelectrochemical methods: cases of ternary II- III₂-VI₄ compounds and polycristalline silicon for photovoltaic solar cellsSAVADOGO, Oumarou.1985, [234] pThesis